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| PRELIMINARY MITSUBISHI SEMICONDUCTOR Notice: This is not a final specification. Some parametric limits are subject to change. MGFC45V3436A 3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V3436A is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE 24 +/- 0.3 2 N . I 0 M 2 / + 4 . 7 1 N I M 2 4 . 0 / + 3 . 4 2 . 0 -R1.2 / + 0 . 8 unit : mm FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=3.4 - 3.6 GHz High power gain GLP = 12 dB (TYP.) @ f=3.4 - 3.6GHz High power added efficiency P.A.E. = 36 % (TYP.) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L. (1) 0.6 +/- 0.15 (2) (3) 20.4 +/- 0.2 16.7 5 0 . 0 / + 1 . 0 2 . 0 / + 4 . 2 APPLICATION item 01 : 3.4 - 3.6 GHz band power amplifier item 51 : 3.4 - 3.6 GHz band digital ratio communication QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 8 (A) RG=25 (ohm) 4 . 1 GF-38 (Ta=25deg.C) Ratings -15 -15 20 -80 168 150 175 -65 / +175 Unit V V A mA mA W deg.C deg.C (1) gate (2) source(flange) (3)drain < Keep safety first in your circuit designs! > ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT *1 Tch Tstg *1 : Tc=25deg.C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) P1dB GLP ID P.A.E. IM3 *2 Rth(ch-c) *3 (Ta=25deg.C) Test conditions Min. VDS = 3V , VGS = 0V VDS = 3V , ID = 8A VDS = 3V , ID = 160mA -2 44 VDS=10V, ID(RF off)=8A, f=3.4 - 3.6GHz 11 -42 delta Vf method Limits Typ. 24 8 45 12 8 36 -45 0.8 Unit Max. -5 1 A S V dBm dB A % dBc deg.C/W Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance *2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=3.4,3.5,3.6GHz,delta f=10MHz *3 : Channel-case MITSUBISHI ELECTRIC Mar.'99 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC45V3436A 3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET Po, P.A.E. vs. Pin 16 LINEAR POWER GAIN GLP (dB) TYPICAL CHARACTERISTICS P1dB,GLP vs. f 47 46 OUTPUT POWER P1dB (dBm) 46 44 VDS=10V IDS=8A f=3.5GHz 100 15 P1dB OUTPUT POWER Po (dBm) 42 40 38 36 34 32 30 28 45 44 GLP 14 13 12 11 10 9 3.3 3.4 3.5 FREQUENCY f (GHz) Po,IM3 vs. f Po 80 60 43 42 41 40 3.6 3.7 40 P.A.E. 20 26 17 19 21 23 25 27 29 31 33 35 37 INPUT POWER Pin (dBm) 0 42 40 VDS=10V IDS=8A f1=3.600GHz f2=3.605GHz 2-tone test 20 10 0 OUTPUT POWER Po (dBm S.C.L.) 38 36 34 32 30 Po -10 -30 -40 IM3 28 26 24 16 18 20 22 24 26 28 30 INPUT POWER Pin (dBm S.C.L.) -50 -60 -70 S parameters f (GHz) 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 Magn. 0.54 0.51 0.49 0.50 0.51 0.53 0.55 0.56 0.56 ( Ta=25deg.C , VDS=10(V),IDS=8(A) ) S-Parameter (TYP.) S11 Angle(deg) -95 -121 -146 -171 165 144 125 110 93 Magn. 3.01 3.27 3.45 3.58 3.71 3.80 3.82 3.81 3.84 S21 Angle(deg) 104 87 73 59 42 27 14 -1 -15 Magn. 0.03 0.03 0.04 0.04 0.05 0.06 0.06 0.06 0.07 S12 Angle(deg) 43 29 13 -12 -21 -37 -52 -69 -80 Magn. 0.60 0.56 0.50 0.44 0.39 0.34 0.29 0.24 0.22 S22 Angle(deg) 13 3 -6 -17 -29 -42 -56 -74 -94 IM3 (dBc) -20 MITSUBISHI ELECTRIC POWER ADDED EFFICIENCY (%) Mar.'99 VDS=10V IDS=8.0A |
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